Справочник MOSFET. MDS1524URH

 

MDS1524URH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDS1524URH
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.7 V
   Максимально допустимый постоянный ток стока |Id|: 13.2 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 4.7 ns
   Выходная емкость (Cd): 205 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0081 Ohm
   Тип корпуса: SOIC-8

 Аналог (замена) для MDS1524URH

 

 

MDS1524URH Datasheet (PDF)

 ..1. Size:661K  magnachip
mds1524urh.pdf

MDS1524URH MDS1524URH

MDS1524 Single N-channel Trench MOSFET 30V, 19.3A, 8.1mGeneral Description Features The MDS1524 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 19.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1524 is suitable for DC/DC converter and

 8.1. Size:664K  magnachip
mds1526urh.pdf

MDS1524URH MDS1524URH

MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0mGeneral Description Features The MDS1526 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1526 is suitable for DC/DC converter and

 8.2. Size:669K  magnachip
mds1528urh.pdf

MDS1524URH MDS1524URH

MDS1528 Single N-channel Trench MOSFET 30V, 11.9A, 18.8mGeneral Description Features The MDS1528 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 11.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1528 is suitable for DC/DC converter and

 8.3. Size:676K  magnachip
mds1521urh.pdf

MDS1524URH MDS1524URH

MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0mGeneral Description Features The MDS1521 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 28.2A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1521 is suitable for DC/DC converter and

 8.4. Size:665K  magnachip
mds1525urh.pdf

MDS1524URH MDS1524URH

MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1mGeneral Description Features The MDS1525 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1525 is suitable for DC/DC converter and

 8.5. Size:676K  magnachip
mds1527urh.pdf

MDS1524URH MDS1524URH

MDS1527 Single N-channel Trench MOSFET 30V, 13.1A, 15.9mGeneral Description Features The MDS1527 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 13.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1527 is suitable for DC/DC converter and

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