MDS1526URH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDS1526URH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.7 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11.3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 139 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: SOIC-8
Аналог (замена) для MDS1526URH
MDS1526URH Datasheet (PDF)
mds1526urh.pdf
MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0mGeneral Description Features The MDS1526 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1526 is suitable for DC/DC converter and
mds1528urh.pdf
MDS1528 Single N-channel Trench MOSFET 30V, 11.9A, 18.8mGeneral Description Features The MDS1528 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 11.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1528 is suitable for DC/DC converter and
mds1521urh.pdf
MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0mGeneral Description Features The MDS1521 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 28.2A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1521 is suitable for DC/DC converter and
mds1525urh.pdf
MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1mGeneral Description Features The MDS1525 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1525 is suitable for DC/DC converter and
mds1524urh.pdf
MDS1524 Single N-channel Trench MOSFET 30V, 19.3A, 8.1mGeneral Description Features The MDS1524 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 19.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1524 is suitable for DC/DC converter and
mds1527urh.pdf
MDS1527 Single N-channel Trench MOSFET 30V, 13.1A, 15.9mGeneral Description Features The MDS1527 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 13.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1527 is suitable for DC/DC converter and
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRF9Z24L
History: IRF9Z24L
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918