Справочник MOSFET. MDS1651URH

 

MDS1651URH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDS1651URH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для MDS1651URH

 

 

MDS1651URH Datasheet (PDF)

 ..1. Size:641K  magnachip
 mds1651urh.pdf

MDS1651URH MDS1651URH

MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17mGeneral Description Features The MDS1651 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON)

 8.1. Size:729K  magnachip
 mds1654urh.pdf

MDS1651URH MDS1651URH

MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5mGeneral Description Features The MDS1654 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON)

 8.2. Size:678K  magnachip
 mds1655urh.pdf

MDS1651URH MDS1651URH

MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC

 8.3. Size:1043K  magnachip
 mds1652eruh.pdf

MDS1651URH MDS1651URH

Preliminary Subject to change without notice ` MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. Excelle

 8.4. Size:689K  magnachip
 mds1656urh.pdf

MDS1651URH MDS1651URH

MDS1656 Single N-Channel Trench MOSFET 30V, 7.2A, 28m General Description Features The MDS1656 uses advanced MagnaChips trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.2A @V = 10V D GSswitching performance and reliability RDS(ON)

 8.5. Size:745K  magnachip
 mds1653urh.pdf

MDS1651URH MDS1651URH

MDS1653 Single N-Channel Trench MOSFET 30V, 12A, 12mGeneral Description Features The MDS1653 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 12A @VGS = 10V high switching performance and excellent reliability. RDS(ON)

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