Справочник MOSFET. MDS3603URH

 

MDS3603URH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDS3603URH
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 445 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: SOIC-8

 Аналог (замена) для MDS3603URH

 

 

MDS3603URH Datasheet (PDF)

 ..1. Size:694K  magnachip
 mds3603urh.pdf

MDS3603URH MDS3603URH

MDS3603Single P-Channel Trench MOSFET, -30V, -12A, 10.1m General Description Features The MDS3603 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -12A @V = -10V D GS RDS(ON) This device is suited for Power Management and load

 8.1. Size:693K  magnachip
 mds3604urh.pdf

MDS3603URH MDS3603URH

MDS3604Single P-Channel Trench MOSFET, -30V, -11A, 12.1m General Description Features The MDS3604 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -11A @V = -10V D GS RDS(ON) This device is suited for Power Management and load

 8.2. Size:873K  cn vbsemi
 mds3604urh.pdf

MDS3603URH MDS3603URH

MDS3604URHwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

 9.1. Size:713K  magnachip
 mds3653urh.pdf

MDS3603URH MDS3603URH

MDS3653Single P-Channel Trench MOSFET, -30V, -14.6A, 7m General Description Features The MDS3653 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -14.6A @V = -10V D GS RDS(ON) This device is suited for Power Management and load

 9.2. Size:856K  magnachip
 mds3652urh.pdf

MDS3603URH MDS3603URH

MDS3652 Single P-Channel Trench MOSFET, -30V, -11A, 17m General Description Features The MDS3652 uses advanced MagnaChips MOSFET V = -30V DSTechnology to provide low on-state resistance, high I = -11A @V = -10V D GSswitching performance and excellent reliability R DS(ON)

 9.3. Size:825K  magnachip
 mds3651urh.pdf

MDS3603URH MDS3603URH

MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35m General Description Features The MDS3651 uses advanced MagnaChips V = -30V DSMOSFET Technology to provide low on-state I = -6.0A @ V = -10V D GSresistance, high switching performance and excellent R DS(ON)reliability

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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