MDS3604URH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDS3604URH
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 30.5 nC
Время нарастания (tr): 12.9 ns
Выходная емкость (Cd): 338 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm
Тип корпуса: SOIC-8
Аналог (замена) для MDS3604URH
MDS3604URH Datasheet (PDF)
mds3604urh.pdf
MDS3604Single P-Channel Trench MOSFET, -30V, -11A, 12.1m General Description Features The MDS3604 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -11A @V = -10V D GS RDS(ON) This device is suited for Power Management and load
mds3604urh.pdf
MDS3604URHwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
mds3603urh.pdf
MDS3603Single P-Channel Trench MOSFET, -30V, -12A, 10.1m General Description Features The MDS3603 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -12A @V = -10V D GS RDS(ON) This device is suited for Power Management and load
mds3653urh.pdf
MDS3653Single P-Channel Trench MOSFET, -30V, -14.6A, 7m General Description Features The MDS3653 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -14.6A @V = -10V D GS RDS(ON) This device is suited for Power Management and load
mds3652urh.pdf
MDS3652 Single P-Channel Trench MOSFET, -30V, -11A, 17m General Description Features The MDS3652 uses advanced MagnaChips MOSFET V = -30V DSTechnology to provide low on-state resistance, high I = -11A @V = -10V D GSswitching performance and excellent reliability R DS(ON)
mds3651urh.pdf
MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35m General Description Features The MDS3651 uses advanced MagnaChips V = -30V DSMOSFET Technology to provide low on-state I = -6.0A @ V = -10V D GSresistance, high switching performance and excellent R DS(ON)reliability
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
