Справочник MOSFET. MDU1513URH

 

MDU1513URH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDU1513URH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 26.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12.1 ns
   Cossⓘ - Выходная емкость: 329 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0046 Ohm
   Тип корпуса: POWERDFN56

 Аналог (замена) для MDU1513URH

 

 

MDU1513URH Datasheet (PDF)

 ..1. Size:729K  magnachip
mdu1513urh.pdf

MDU1513URH
MDU1513URH

MDU1513 Single N-channel Trench MOSFET 30V, 88.1A, 4.6mGeneral Description Features The MDU1513 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 88.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1513 is suitable device for DC/DC Converter

 8.1. Size:702K  magnachip
mdu1516urh.pdf

MDU1513URH
MDU1513URH

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mGeneral Description Features The MDU1516 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 47.6A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1516 is suitable device for DC/DC Converter

 8.2. Size:752K  magnachip
mdu1511rh.pdf

MDU1513URH
MDU1513URH

MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mGeneral Description Features The MDU1511 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent RDS(ON) quality. MDU1511 is suitable device for DC/DC Converter

 8.3. Size:1008K  magnachip
mdu1515urh.pdf

MDU1513URH
MDU1513URH

MDU1515 Single N-channel Trench MOSFET 30V, 57.4A, 7.2m General Description Features The MDU1515 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 57.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1515 is suitable device for DC/DC Converter

 8.4. Size:711K  magnachip
mdu1514urh.pdf

MDU1513URH
MDU1513URH

MDU1514 Single N-channel Trench MOSFET 30V, 66.3A, 6.0mGeneral Description Features The MDU1514 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 66.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1514 is suitable device for DC/DC Converter

 8.5. Size:759K  magnachip
mdu1518urh.pdf

MDU1513URH
MDU1513URH

MDU1518 Single N-channel Trench MOSFET 30V, 94.5A, 4.2mGeneral Description Features The MDU1518 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 94.5A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1518 is suitable device for DC/DC Converter

 8.6. Size:745K  magnachip
mdu1517rh.pdf

MDU1513URH
MDU1513URH

MDU1517 Single N-channel Trench MOSFET 30V, 100.0A, 2.9mGeneral Description Features The MDU1517 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100.0A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDU1517 is suitable device for DC to DC

 8.7. Size:725K  magnachip
mdu1512rh.pdf

MDU1513URH
MDU1513URH

MDU1512 Single N-channel Trench MOSFET 30V, 100.0A, 3.4mGeneral Description Features The MDU1512 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100.0A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDU1512 is suitable device for DC to DC

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