MDU1518URH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDU1518URH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 5.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.7 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 27.3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 12.3 ns
Cossⓘ - Выходная емкость: 379 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
Тип корпуса: POWERDFN56
Аналог (замена) для MDU1518URH
MDU1518URH Datasheet (PDF)
mdu1518urh.pdf
MDU1518 Single N-channel Trench MOSFET 30V, 94.5A, 4.2mGeneral Description Features The MDU1518 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 94.5A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1518 is suitable device for DC/DC Converter
mdu1513urh.pdf
MDU1513 Single N-channel Trench MOSFET 30V, 88.1A, 4.6mGeneral Description Features The MDU1513 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 88.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1513 is suitable device for DC/DC Converter
mdu1516urh.pdf
MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mGeneral Description Features The MDU1516 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 47.6A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1516 is suitable device for DC/DC Converter
mdu1511rh.pdf
MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mGeneral Description Features The MDU1511 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent RDS(ON) quality. MDU1511 is suitable device for DC/DC Converter
mdu1515urh.pdf
MDU1515 Single N-channel Trench MOSFET 30V, 57.4A, 7.2m General Description Features The MDU1515 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 57.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1515 is suitable device for DC/DC Converter
mdu1514urh.pdf
MDU1514 Single N-channel Trench MOSFET 30V, 66.3A, 6.0mGeneral Description Features The MDU1514 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 66.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDU1514 is suitable device for DC/DC Converter
mdu1517rh.pdf
MDU1517 Single N-channel Trench MOSFET 30V, 100.0A, 2.9mGeneral Description Features The MDU1517 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100.0A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDU1517 is suitable device for DC to DC
mdu1512rh.pdf
MDU1512 Single N-channel Trench MOSFET 30V, 100.0A, 3.4mGeneral Description Features The MDU1512 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 100.0A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDU1512 is suitable device for DC to DC
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918