Справочник MOSFET. MSF6N40

 

MSF6N40 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MSF6N40
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для MSF6N40

 

 

MSF6N40 Datasheet (PDF)

 ..1. Size:881K  bruckewell
 msf6n40.pdf

MSF6N40 MSF6N40

MSF6N40 N-Channel Enhancement Mode Power MOSFET Description The MSF6N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 9.1. Size:427K  bruckewell
 msf6n65.pdf

MSF6N40 MSF6N40

MSF6N65 N-Channel Enhancement Mode Power MOSFET Description The MSF6N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 9.2. Size:848K  bruckewell
 msf6n60.pdf

MSF6N40 MSF6N40

MSF6N60 N-Channel Enhancement Mode Power MOSFET Description The MSF6N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 9.3. Size:1096K  bruckewell
 msf6n90.pdf

MSF6N40 MSF6N40

MSF6N90 900V N-Channel MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charg

 9.4. Size:813K  bruckewell
 msf6n70.pdf

MSF6N40 MSF6N40

MSF6N70 700V N-Channel MOSFET Description The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

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