MSF7N65 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MSF7N65
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 48 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 29 nC
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 121.7 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
Тип корпуса: TO-220F
MSF7N65 Datasheet (PDF)
msf7n65.pdf
MSF7N65 650V N-Channel MOSFET GENERAL DESCRIPTION The MSF7N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES Low On Resistance Simple Drive Requi
msf7n60.pdf
MSF7N60 600V N-Channel MOSFET Description The MSF7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem
mmsf7n03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03HD/DDesigner's Data SheetMMSF7N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V
mmsf7n03zrev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03Z/DDesigner's Data SheetMMSF7N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 7.5 AMPERESMotorolas High Cell Density TMOS process and
mmsf7n03hdrev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03HD/DDesigner's Data SheetMMSF7N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V
msf7n80.pdf
MSF7N80 800V N-Channel MOSFET Description The MSF7N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
