MSU2N60F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MSU2N60F
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 23 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 40 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO-220F
MSU2N60F Datasheet (PDF)
msu2n60s.pdf

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msu2n60.pdf

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msu2n70.pdf

MSU2N70 700V N-Channel MOSFET Description The MSU2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technolo
Другие MOSFET... MSU12N60F , MSU12N60T , MSU18N40 , MSU1N60T , MSU1N60F , MSU1N60D , MSU1N60U , MSU2N60T , IRF830 , MSU2N60D , MSU2N60U , MSU2N60S , MSU2N70 , MSU4D5N50Q , MSU4N40 , MSU4N60 , MSU4N60S .
History: PMDPB95XNE | NP88N075NUE | IPA65R380E6
History: PMDPB95XNE | NP88N075NUE | IPA65R380E6



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