Справочник MOSFET. MTB30P06VT4G

 

MTB30P06VT4G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTB30P06VT4G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 54 nC
   trⓘ - Время нарастания: 25.9 ns
   Cossⓘ - Выходная емкость: 524 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для MTB30P06VT4G

 

 

MTB30P06VT4G Datasheet (PDF)

 ..1. Size:81K  onsemi
 mtb30p06v mtb30p06vt4 mtb30p06vt4g.pdf

MTB30P06VT4G MTB30P06VT4G

MTB30P06VPreferred DevicePower MOSFET30 Amps, 60 VoltsP-Channel D2PAKThis Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power30 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)

 5.1. Size:215K  motorola
 mtb30p06v.pdf

MTB30P06VT4G MTB30P06VT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30P06V/DDesigner's Data SheetMTB30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product abou

 5.2. Size:247K  motorola
 mtb30p06vrev1x.pdf

MTB30P06VT4G MTB30P06VT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB30P06V/DDesigner's Data SheetMTB30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 30 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.080 OHMtance area product abou

 6.1. Size:280K  cystek
 mtb30p06j3.pdf

MTB30P06VT4G MTB30P06VT4G

Spec. No. : C796J3 Issued Date : 2012.06.19 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB30P06J3 ID -24ARDS(ON)@VGS=-10V, ID=-20A 28m(typ)RDS(ON)@VGS=-4.5V, ID=-20A 33m(typ)Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag

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