MTB50P03HDLT4 datasheet, аналоги, основные параметры

Наименование производителя: MTB50P03HDLT4  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 15 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 340 ns

Cossⓘ - Выходная емкость: 1550 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm

Тип корпуса: D2PAK

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Аналог (замена) для MTB50P03HDLT4

- подборⓘ MOSFET транзистора по параметрам

 

MTB50P03HDLT4 даташит

 ..1. Size:90K  onsemi
 mtb50p03hdl mtb50p03hdlg mtb50p03hdlt4 mtb50p03hdlt4g.pdf pdf_icon

MTB50P03HDLT4

MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and

 3.1. Size:182K  motorola
 mtb50p03hdlrev2.pdf pdf_icon

MTB50P03HDLT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a

 3.2. Size:187K  motorola
 mtb50p03hdl.pdf pdf_icon

MTB50P03HDLT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a

 4.1. Size:258K  motorola
 mtb50p03hd.pdf pdf_icon

MTB50P03HDLT4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50P03HDL/D Designer's Data Sheet MTB50P03HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 50 AMPERES 30 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.025 OHM than a

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