Spec. No. : C960H8 Issued Date : 2014.10.30 CYStech Electronics Corp.Revised Date : 2014.11.14 Page No. : 1/10 P-Channel Enhancement Mode Power MOSFET BVDSS -150VMTB60P15H8ID@VGS=-10V, TC=25C -23A ID@VGS=-10V, TA=25C -5.9A VGS=-10V, ID=-5.2A 56m Features RDSON(TYP) VGS=-4.5V, ID=-5A 60m Single Drive Requirement Low On-resistance Fast Switchi

Spec. No. : C796H8 Issued Date : 2013.08.19 CYStech Electronics Corp.Revised Date : 2013.09.02 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB60P06H8ID -5A56m VGS=-10V, ID=-5A RDSON(TYP) 65m VGS=-4.5V, ID=-4.5A Description The MTB60P06H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination

Spec. No. : C796E3 Issued Date : 2011.12.05 CYStech Electronics Corp.Revised Date :2011.12.28 Page No. : 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB60P06E3 ID -20A57mFeatures RDSON(TYP)@VGS=-10V,ID=-15A Low Gate Charge 67mRDSON(TYP)@VGS=-4.5V,ID=-7A Simple Drive Requirement Pb-free lead plating package Equivalent Circui

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB60N05HDL/DProduct PreviewMTB60N05HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET60 AMPERESNChannel EnhancementMode Silicon Gate50 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.014 OHMthan any existing surface mou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB60N06HD/DDesigner's Data SheetMTB60N06HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET60 AMPERESNChannel EnhancementMode Silicon Gate60 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.014 OHMthan any existing sur

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB60N06HD/DDesigner's Data SheetMTB60N06HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET60 AMPERESNChannel EnhancementMode Silicon Gate60 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.014 OHMthan any existing sur

Spec. No. : C796Q8 Issued Date : 2013.07.08 CYStech Electronics Corp.Revised Date : Page No. : 1/9 Dual P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB60B06Q8 ID -4.5A56m(typ.)RDSON(MAX)@VGS=-10V, ID=-3.5A 66m(typ.)RDSON(MAX)@VGS=-4.5V, ID=-3A Description The MTB60B06Q8 provides the designer with the best combination of fast switching, ruggediz

Spec. No. : C954N3 Issued Date : 2014.06.24 CYStech Electronics Corp.Revised Date : Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTB600N03N3 ID@VGS=4.5V 1.6A448m(typ.)RDSON@VGS=4.5V, ID=200mA 809m(typ.)RDSON@VGS=2.5V, ID=100mA Features Low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23

Spec. No. : C708J3 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB60N06J3 ID 16A35m(typ.) RDSON(MAX)@VGS=10V, ID=10A 40m(typ.) RDSON(MAX)@VGS=5V, ID=8A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalen

Spec. No. : C708L3 Issued Date : 2009.05.26 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB60N06L3 ID 5.9A41m (typ) RDSON@VGS=10V, ID=5A 46m (typ) RDSON@VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circui

Spec. No. : C708Q8 Issued Date : 2010.12.16 CYStech Electronics Corp.Revised Date : 2012.08.06 Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET BVDSS 60VMTB60A06Q8 ID 7ARDSON@VGS=10V, ID=5A 37m(typ)RDSON@VGS=5V, ID=4A 42m(typ)Description The MTB60A06Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low