APQ04SN60CF - аналоги, параметры транзистора - Справочник транзисторов

APQ04SN60CF даташит

..1. Size:765K alpha pacific
apq04sn60cf apq04sn60ch.pdf pdf_icon

DEVICE SPECIFICATION APQ04SN60CH APQ04SN60CF 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9 (typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored

4.1. Size:703K alpha pacific
apq04sn60ca apq04sn60cb.pdf pdf_icon

DEVICE SPECIFICATION APQ04SN60CA APQ04SN60CB 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9 (typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored

4.2. Size:489K alpha pacific
apq04sn60ce.pdf pdf_icon

DEVICE SPECIFICATION APQ04SN60CE 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9 (typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

5.1. Size:461K alpha pacific
apq04sn60a apq04sn60af.pdf pdf_icon

DEVICE SPECIFICATION apQ04SN60A(F) 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A RDS(on) = 1.72 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

Другие MOSFET... APQ03SN80CB , APQ03SN80CF , APQ03SN80CH , APQ04SN60A , APQ04SN60AF , APQ04SN60CA , APQ04SN60CB , APQ04SN60CE , SI2302 , APQ04SN60CH , APQ05SN60A , APQ05SN60AF , APQ06SN60A , APQ06SN60AF , APQ06SN60AH , APQ06SN65AF , APQ06SN65AH .