Справочник MOSFET. APQ07SN65AH

 

APQ07SN65AH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APQ07SN65AH
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 49 ns
   Cossⓘ - Выходная емкость: 101 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.3 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для APQ07SN65AH

   - подбор ⓘ MOSFET транзистора по параметрам

 

APQ07SN65AH Datasheet (PDF)

 ..1. Size:745K  alpha pacific
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APQ07SN65AH

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0(typ)VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

 4.1. Size:745K  alpha pacific
 apq07sn65af.pdf pdf_icon

APQ07SN65AH

DEVICE SPECIFICATION APQ07SN65AH APQ07SN65AF 650V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 7A field effect transistors are produced using planar RDS(on) = 1.0(typ)VGS = 10 V ,ID =3.45A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

 6.1. Size:663K  alpha pacific
 apq07sn60af.pdf pdf_icon

APQ07SN65AH

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.)VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

 6.2. Size:663K  alpha pacific
 apq07sn60ah.pdf pdf_icon

APQ07SN65AH

DEVICE SPECIFICATION APQ07SN60AH APQ07SN60AF 600V/7A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 7A effect transistors are produced using planar stripe, RDS(on) =0.9 (typ.)VGS =10V, ID =3.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored t

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APQ06SN60A , APQ06SN60AF , APQ06SN60AH , APQ06SN65AF , APQ06SN65AH , APQ07SN60AF , APQ07SN60AH , APQ07SN65AF , RU6888R , APQ07SN80BF , APQ07SN80BH , APQ08SN50B , APQ08SN50BE , APQ08SN50BF , APQ08SN50BH , APQ09SN50A , APQ09SN50AF .

History: FTK6N70D | NCE6990 | APQ07SN80BH | WML25N65EM | IRFP460PBF | JFFM9N50C | FY14AAJ-03F

 

 
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