IRFS730 - описание и поиск аналогов

 ..1. Size:286K  1
 irfs730 irfs731.pdf 

 ..2. Size:309K  1
 irfs730 irfs731 irfs732 irfs733.pdf 

 ..3. Size:1059K  blue-rocket-elect
 irfs730.pdf 

IRFS730 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

 0.1. Size:904K  fairchild semi
 irfs730b.pdf 

 0.2. Size:506K  samsung
 irfs730a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

 9.1. Size:304K  1
 irfs740 irfs741 irfs742 irfs743.pdf 

 9.2. Size:295K  1
 irfs720 irfs721 irfs722 irfs723.pdf 

 9.3. Size:284K  1
 irfs720 irfs721.pdf 

 9.4. Size:115K  1
 irfs710a.pdf 

 9.5. Size:278K  1
 irfs750a.pdf 

IRFS750A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo

 9.6. Size:880K  1
 irf720b irfs720b.pdf 

 9.7. Size:276K  1
 irfs740 irfs741.pdf 

 9.8. Size:656K  international rectifier
 irfb7534 irfs7534pbf irfsl7534pbf.pdf 

StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4m G Synchronous rectifier applications ID (Silicon Limited) 232A

 9.9. Size:292K  international rectifier
 irfs7437pbf irfsl7437pbf.pdf 

StrongIRFET IRFS7437PbF IRFSL7437PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications HEXFET Power MOSFET l Battery powered circuits VDSS 40V D l Half-bridge and full-bridge topologies l Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches G ID (Silicon Limite

 9.10. Size:667K  international rectifier
 irfb7787 irfs7787pbf irfsl7787pbf.pdf 

StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power suppl

 9.11. Size:654K  international rectifier
 irfb7537 irfs7537pbf irfsl7537pbf.pdf 

StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup

 9.12. Size:542K  international rectifier
 irfs7430-7ppbf.pdf 

StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D PWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75m G max Electronic ballast applications ID (Silicon Limited) 52

 9.13. Size:304K  international rectifier
 irfs7434pbf irfsl7434pbf.pdf 

StrongIRFET IRFS7434PbF IRFSL7434PbF Applications HEXFET Power MOSFET l Brushed Motor drive applications VDSS 40V D l BLDC Motor drive applications RDS(on) typ. 1.25m l Battery powered circuits max. 1.6m l Half-bridge and full-bridge topologies G l Synchronous rectifier applications 320A ID (Silicon Limited) l Resonant mode power supplies S ID (Package Limited) 19

 9.14. Size:655K  international rectifier
 irfb7530 irfs7530pbf irfsl7530pbf.pdf 

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 295A

 9.15. Size:613K  international rectifier
 irfs7762pbf irfsl7762pbf.pdf 

StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies S ID 8

 9.16. Size:298K  international rectifier
 irfs7430pbf irfsl7430pbf.pdf 

StrongIRFET IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications VDSS 40V D l Brushed motor drive applications RDS(on) typ. 0.97m l BLDC motor drive applications l Battery powered circuits max. 1.2m G l Half-bridge and full-bridge topologies 426A ID (Silicon Limited) l Synchronous rectifier applications S ID (Package Limited) 195A l Resonant mode power supplies l O

 9.17. Size:516K  international rectifier
 irfs7534-7ppbf.pdf 

StrongIRFET IRFS7534-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications BLDC motor drive applications VDSS 60V D Battery powered circuits RDS(on) typ. 1.60m Half-bridge and full-bridge topologies max 1.95m Synchronous rectifier applications G Resonant mode power supplies ID (Silicon Limit

 9.18. Size:653K  international rectifier
 irfb7734pbf irfs7734pbf irfsl7734pbf.pdf 

StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp

 9.19. Size:657K  international rectifier
 irfb7730 irfs7730pbf irfsl7730pbf.pdf 

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6m G Synchronous rectifier applications ID (Silicon Limited) 246A

 9.20. Size:301K  international rectifier
 irfs7440pbf irfsl7440pbf.pdf 

StrongIRFET IRFS7440PbF IRFSL7440PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications l Battery powered circuits D VDSS 40V l Half-bridge and full-bridge topologies RDS(on) typ. 2.0m l Synchronous rectifier applications max. 2.5m l Resonant mode power supplies G ID 208A l OR-ing and redundant power switches l DC/DC an

 9.21. Size:576K  international rectifier
 irfs7734-7ppbf.pdf 

StrongIRFET IRFS7734-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications VDSS 75V D Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G max 3.05m Synchronous rectifier applications S Resonant mode power supplies ID 197A O

 9.22. Size:650K  international rectifier
 irfb7734 irfs7734pbf irfsl7734pbf.pdf 

StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp

 9.23. Size:985K  international rectifier
 irfb7787pbf irfs7787pbf irfsl7787pbf.pdf 

StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power supplies S OR-ing

 9.24. Size:610K  international rectifier
 irfs7762 irfsl7762pbf.pdf 

StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies S ID 8

 9.25. Size:565K  international rectifier
 irfs7530-7ppbf.pdf 

StrongIRFET IRFS7530-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V BLDC Motor drive applications D RDS(on) typ. Battery powered circuits 1.15m Half-bridge and full-bridge topologies max 1.4m G Synchronous rectifier applications ID (Silicon Limited) 338A S Resonant mode

 9.26. Size:262K  international rectifier
 irfs7437-7ppbf.pdf 

StrongIRFET IRFS7437-7PPbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications D l PWM Inverterized topologies VDSS 40V l Battery powered circuits RDS(on) typ. 1.1m l Half-bridge and full-bridge topologies max. 1.4m l Electronic ballast applications G ID (Silicon Limited) 295A l Synchronous rectifier applications l Reso

 9.27. Size:657K  international rectifier
 irfb7730pbf irfs7730pbf irfsl7730pbf.pdf 

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6m G Synchronous rectifier applications ID (Silicon Limited) 246A

 9.28. Size:518K  international rectifier
 irfs7730-7ppbf.pdf 

StrongIRFET IRFS7730-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V BLDC motor drive applications D RDS(on) typ. Battery powered circuits 1.70m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 269A S Resonant mode

 9.29. Size:655K  international rectifier
 irfb7540 irfs7540pbf irfsl7540pbf.pdf 

StrongIRFET IRFB7540PbF IRFS7540PbF IRFSL7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 5.1m Resonant mode power sup

 9.30. Size:538K  international rectifier
 irfs7434-7ppbf.pdf 

StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0m G max Resonant mode power supplies ID (Silicon Limited

 9.31. Size:655K  international rectifier
 irfb7530pbf irfs7530pbf irfsl7530pbf.pdf 

StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 295A

 9.32. Size:924K  fairchild semi
 irf740b irfs740b.pdf 

 9.33. Size:931K  samsung
 irfs740a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

 9.34. Size:501K  samsung
 irfs720a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

 9.35. Size:28K  samsung
 irfszxx irfs5xx irfs6xx irfs7xx.pdf 

 9.36. Size:1213K  blue-rocket-elect
 irfs740.pdf 

IRFS740 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

 9.37. Size:258K  inchange semiconductor
 irfs7730.pdf 

isc N-Channel MOSFET Transistor IRFS7730 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.38. Size:258K  inchange semiconductor
 irfs7787.pdf 

Isc N-Channel MOSFET Transistor IRFS7787 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 9.39. Size:251K  inchange semiconductor
 irfs7434.pdf 

isc N-Channel MOSFET Transistor IRFS7434 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.40. Size:252K  inchange semiconductor
 irfs7540.pdf 

isc N-Channel MOSFET Transistor IRFS7540 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.41. Size:257K  inchange semiconductor
 irfs7762.pdf 

Isc N-Channel MOSFET Transistor IRFS7762 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 9.42. Size:215K  inchange semiconductor
 irfs7534trlpbf.pdf 

isc N-Channel MOSFET Transistor IRFS7534TRLPBF DESCRIPTION Drain Current I =232 A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhan

 9.43. Size:205K  inchange semiconductor
 irfs7440pbf.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS7440PBF FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC/AC Inverters DC/DC a

 9.44. Size:258K  inchange semiconductor
 irfs7530.pdf 

isc N-Channel MOSFET Transistor IRFS7530 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.45. Size:258K  inchange semiconductor
 irfs7734.pdf 

isc N-Channel MOSFET Transistor IRFS7734 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.46. Size:257K  inchange semiconductor
 irfs7537.pdf 

isc N-Channel MOSFET Transistor IRFS7537 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.47. Size:252K  inchange semiconductor
 irfs7437.pdf 

isc N-Channel MOSFET Transistor IRFS7437 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S