Справочник MOSFET. APQ10SN60AH

 

APQ10SN60AH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APQ10SN60AH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 156 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 39.4 nC
   trⓘ - Время нарастания: 32.3 ns
   Cossⓘ - Выходная емкость: 162 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для APQ10SN60AH

 

 

APQ10SN60AH Datasheet (PDF)

 ..1. Size:687K  alpha pacific
 apq10sn60ah.pdf

APQ10SN60AH APQ10SN60AH

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.1. Size:687K  alpha pacific
 apq10sn60af.pdf

APQ10SN60AH APQ10SN60AH

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.2. Size:437K  alpha pacific
 apq10sn60a.pdf

APQ10SN60AH APQ10SN60AH

DEVICE SPECIFICATION apQ10SN60A(F)600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10ARDS(on) =0.6(Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

 6.1. Size:373K  alpha pacific
 apq10sn65af apq10sn65ah.pdf

APQ10SN60AH APQ10SN60AH

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75(typ)VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

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