Справочник MOSFET. APQ12SN60A

 

APQ12SN60A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APQ12SN60A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 225 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 83 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для APQ12SN60A

   - подбор ⓘ MOSFET транзистора по параметрам

 

APQ12SN60A Datasheet (PDF)

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APQ12SN60A

DEVICE SPECIFICATION apQ12SN60A(F)600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A RDS(on) = 0.52(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini

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APQ12SN60A

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 0.2. Size:754K  alpha pacific
 apq12sn60af.pdf pdf_icon

APQ12SN60A

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

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 apq12sn65af apq12sn65ah.pdf pdf_icon

APQ12SN60A

DEVICE SPECIFICATION APQ12SN65AH APQ12SN65AF 650V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 12A field effect transistors are produced using planar RDS(on) = 0.6(typ)VGS = 10 V ,ID =6A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailor

ПОКАЗАТЬ ЕЩЁ

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History: IRF641

 

 
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