Справочник MOSFET. APQ4ESN50A

 

APQ4ESN50A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APQ4ESN50A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 74 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 38 nC
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для APQ4ESN50A

   - подбор ⓘ MOSFET транзистора по параметрам

 

APQ4ESN50A Datasheet (PDF)

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APQ4ESN50A

DEVICE SPECIFICATION apQ4ESN50A(F)500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

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APQ4ESN50A

DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

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APQ4ESN50A

DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

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APQ4ESN50A

DEVICE SPECIFICATION APQ4ESN50AH APQ4ESN50AF 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APQ16SN06AA , APQ16SN06AB , APQ1HSN60AA , APQ1HSN60AB , APQ25SN06AA , APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , IRFP250N , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD .

 

 
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