APQ4ESN50AH - аналоги, параметры транзистора - Справочник транзисторов

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DEVICE SPECIFICATION APQ4ESN50AH APQ4ESN50AF 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore

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DEVICE SPECIFICATION apQ4ESN50A(F) 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

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DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

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DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

Другие MOSFET... APQ25SN06AA , APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , 7N65 , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A .