CEB110P03 - параметры транзистора MOSFET, его аналоги, datasheet

CEB110P03 Datasheet (PDF)

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CEP110P03/CEB110P03P-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -105.5A, RDS(ON) =5.8m @VGS = -10V.RDS(ON) =8.5m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABS

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CEP1195/CEB1195 CEF1195N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1195 900V 2.75 5A 10VCEB1195 900V 2.75 5A 10VCEF1195 900V 2.75 5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

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cep1186 ceb1186 cef1186.pdf pdf_icon

CEP1186/CEB1186CEF1186N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1186 800V 2.3 6A 10VCEB1186 800V 2.3 6A 10VCEF1186 800V 2.3 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

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