HY2N65T Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HY2N65T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 44.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 18.6 ns
Cossⓘ - Выходная емкость: 36 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.6 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для HY2N65T
HY2N65T Datasheet (PDF)
hy2n65t.pdf

HY2N65T / HY2N65FT650V / 2A650V, RDS(ON)=4.6W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1
hy2n65d.pdf

SINGLEFIG.SINGLE CURVE FIG. 2 NON-T1 FORWARD CURRENTAMBIENT1 2MAXIMUM5 101 25 50 PHASE HALF WAVE 60Hz () 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125HY2N65D / HY2N65M 650V / 2A650V, RDS(ON)=4.6W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha
hy2n60d.pdf

HY2N60D / HY2N60M600V / 2.0A600V, RDS(ON)=4.6@VGS=10V, ID=1.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, PFC and SMPS21 1D G 2 In compliance with EU RoHs 2002/95/EC Directives G3DS3SMechanical Info
hy2n60t.pdf

HY2N60T / HY2N60FT600V / 2.0A600V, RDS(ON)=4.6@VGS=10V, ID=1.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS
Другие MOSFET... HY150N075T , HY18N20D , HY18N20T , HY18N50W , HY1N60D , HY2N60D , HY2N60T , HY2N65D , 2SK3918 , HY2N70D , HY2N70T , HY3N80T , HY4N60D , HY4N60T , HY4N65D , HY4N65T , HY4N70D .
History: FS10UM-9 | 50N06A | AP9475GM | SPP03N60S5 | NP80N055NHE | TK30J25D
History: FS10UM-9 | 50N06A | AP9475GM | SPP03N60S5 | NP80N055NHE | TK30J25D



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