RU1H130S - описание и поиск аналогов

 

Аналоги RU1H130S. Основные параметры


   Наименование производителя: RU1H130S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 86 ns
   Cossⓘ - Выходная емкость: 630 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для RU1H130S

   - подбор ⓘ MOSFET транзистора по параметрам

 

RU1H130S даташит

 ..1. Size:322K  ruichips
 ru1h130s.pdf pdf_icon

RU1H130S

RU1H130S N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan

 7.1. Size:292K  ruichips
 ru1h130q.pdf pdf_icon

RU1H130S

RU1H130Q N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan

 7.2. Size:321K  ruichips
 ru1h130r.pdf pdf_icon

RU1H130S

RU1H130R N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan

 9.1. Size:288K  ruichips
 ru1h100r.pdf pdf_icon

RU1H130S

RU1H100R N-Channel Advanced Power MOSFET Features Pin Description 100V/75A RDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications High Speed Power Switching Uninterruptible Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Parame

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... RU190N10Q , RU190N10R , RU190N10S , RU1C001UN , RU1C001ZP , RU1H100R , RU1H130Q , RU1H130R , 7N65 , RU1H190R , RU1H190S , RU1H300Q , RU1H35K , RU1H35L , RU1H35Q , RU1H35R , RU1H35S .

History: RU3013H

 

 

 


 
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