Справочник MOSFET. RU20P4C

 

RU20P4C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RU20P4C
   Маркировка: 2*
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.1 V
   Максимально допустимый постоянный ток стока |Id|: 4 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 9 nC
   Время нарастания (tr): 11 ns
   Выходная емкость (Cd): 95 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для RU20P4C

 

 

RU20P4C Datasheet (PDF)

 ..1. Size:270K  ruichips
ru20p4c.pdf

RU20P4C
RU20P4C

RU20P4CP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -20V/-4A,RDS (ON) =40m (Typ.) @ VGS=-4.5VRDS (ON) =55m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedSOT-23-3 Lead Free and Green AvailableApplications Power Management Load SwitchP-Channel MOSFETAbsolute Maximum RatingsSymbolParam

 ..2. Size:867K  cn vbsemi
ru20p4c.pdf

RU20P4C
RU20P4C

RU20P4Cwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

 0.1. Size:361K  ruichips
ru20p4c6.pdf

RU20P4C
RU20P4C

RU20P4C6P-Channel Advanced Power MOSFETFeatures Pin Description -20V/-4A,S RDS (ON) =35m(Typ.)@VGS=-4.5V RDS (ON) =45m(Typ.)@VGS=-2.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and Rugged Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)DDSOT23-6DDDDDDDApplicationspp Load S

 9.1. Size:415K  ruichips
ru20p7c.pdf

RU20P4C
RU20P4C

RU20P7CP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-5A, RDS (ON) =20m(Typ.)@VGS=-4.5VD RDS (ON) =30m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23-3DDDDDDDApplicationspp Load Switch

 9.2. Size:338K  ruichips
ru20p18l.pdf

RU20P4C
RU20P4C

RU20P18LP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-18A, RDS (ON) =30m(Typ.)@VGS=-4.5V D RDS (ON) =45m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS Compliant)STO252DAp

 9.3. Size:327K  ruichips
ru20p5e.pdf

RU20P4C
RU20P4C

RU20P5EP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-5A, RDS (ON) =50m(Typ.)@VGS=-4.5V RDS (ON) =65m(Typ.)@VGS=-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)SDGSOT89DApplications Load Switch Power ManagementGSP-Channel MOSFETAbsolute M

 9.4. Size:267K  ruichips
ru20p3b.pdf

RU20P4C
RU20P4C

RU20P3BP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -20V/-3A,RDS (ON) =80m (Typ.) @ VGS=-4.5VRDS (ON) =110m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedSOT-23 Lead Free and Green AvailableApplications Power Management Load SwitchP-Channel MOSFETAbsolute Maximum RatingsSymbolParame

 9.5. Size:393K  ruichips
ru20p7c-i.pdf

RU20P4C
RU20P4C

RU20P7C-IP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-5A, RDS (ON) =20m(Typ.)@VGS=-4.5VD RDS (ON) =30m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23-3Applications Load Switch Power Management Battery ProtectionP-Cha

 9.6. Size:339K  ruichips
ru20p2b.pdf

RU20P4C
RU20P4C

RU20P2BP-Channel Advanced Power MOSFETFeatures Pin Description -20V/-2.4A, RDS (ON) =95m(Typ.)@VGS=-4.5VD RDS (ON) =140m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSP-Channel MOSFETAbsolute Maximum RatingsS

 9.7. Size:866K  cn vbsemi
ru20p3b.pdf

RU20P4C
RU20P4C

RU20P3Bwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top