RU30100R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RU30100R
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 28 nC
trⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 580 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO-220
RU30100R Datasheet (PDF)
ru30100r.pdf
RU30100RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =4 m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Max
ru30100l.pdf
RU30100LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/100A,RDS (ON) =2.2 m(Typ.)@VGS=10VRDS (ON) =4 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Proces
ru3010h.pdf
RU3010HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/8A,RDS (ON) =18m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Other
ru30105r.pdf
RU30105RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/125A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
ru30105l.pdf
RU30105LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processor Power DC-DC Converters
ru30106l.pdf
RU30106LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/130A,RDS (ON) =2.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processo
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