RU30160S. Аналоги и основные параметры
Наименование производителя: RU30160S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 188 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 105 ns
Cossⓘ - Выходная емкость: 660 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
Тип корпуса: TO-263
Аналог (замена) для RU30160S
- подборⓘ MOSFET транзистора по параметрам
RU30160S даташит
..1. Size:323K ruichips
ru30160s.pdf 

RU30160S N-Channel Advanced Power MOSFET Features Pin Description 30V/160A, RDS (ON) =2.3m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U
7.1. Size:302K ruichips
ru30160r.pdf 

RU30160R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/160A, RDS (ON) =2.3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Com
9.1. Size:317K ruichips
ru30120s.pdf 

RU30120S N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.)@VGS=10V D RDS (ON) =3.3m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum
9.2. Size:296K ruichips
ru30100l.pdf 

RU30100L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/100A, RDS (ON) =2.2 m (Typ.)@VGS=10V RDS (ON) =4 m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Proces
9.3. Size:276K ruichips
ru30120l.pdf 

RU30120L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Rat
9.4. Size:551K ruichips
ru30180m-c.pdf 

RU30180M-C N-Channel Advanced Power MOSFET Features Pin Description 30V/160A, RDS (ON) =1.4m (Typ.)@VGS=10V RDS (ON) =1.6m (Typ.)@VGS=4.5V Uses Ruichips Proprietary New TrenchTM Technology G Ultra Low On-Resistance SS S 100% Avalanche Tested D Reliable and Rugged D Qualified According to JEDEC Criteria D D PIN1 Lead Free and Green Devices (RoHS
9.5. Size:763K ruichips
ru30110m.pdf 

RU30110M N-Channel Advanced Power MOSFET Features Pin Description 30V/110A, RDS (ON) =3.8m (Typ.)@VGS=10V D RDS (ON) =4.6m (Typ.)@VGS=4.5V DD D Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance G Fast Switching Speed S S 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant) PIN1 DFN5060 D Applications DC/DC Conve
9.6. Size:302K ruichips
ru30120r.pdf 

RU30120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ra
9.7. Size:281K ruichips
ru3013h.pdf 

RU3013H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/11A, RDS (ON) =16m (Typ.) @ VGS=10V RDS (ON) =24m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Othe
9.8. Size:281K ruichips
ru3010h.pdf 

RU3010H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/8A, RDS (ON) =18m (Typ.) @ VGS=10V RDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Other
9.9. Size:306K ruichips
ru30100r.pdf 

RU30100R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/110A, RDS (ON) =4 m (Typ.)@VGS=10V RDS (ON) =5.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Max
9.10. Size:304K ruichips
ru30105r.pdf 

RU30105R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/125A, RDS (ON) =3.2 m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete
9.11. Size:294K ruichips
ru30105l.pdf 

RU30105L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/110A, RDS (ON) =3.2 m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Processor Power DC-DC Converters
9.12. Size:557K ruichips
ru30120m3.pdf 

RU30120M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =1.8m (Typ.)@VGS=10V D D D RDS (ON) =2.3m (Typ.)@VGS=4.5V D Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance G Fast Switching Speed S S 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant) PIN1 DFN3030 D Applications Fast Ch
9.13. Size:304K ruichips
ru30140r.pdf 

RU30140R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/140A, RDS (ON) =3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit
9.14. Size:295K ruichips
ru30106l.pdf 

RU30106L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/130A, RDS (ON) =2.5m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Processo
Другие IGBT... RU30105R, RU30106L, RU3010H, RU30120L, RU30120S, RU3013H, RU30140R, RU30160R, IRFP064N, RU3020H, RU3020L, RU30230R, RU30231R, RU30290R, RU30291R, RU30300R, RU3030M2