Справочник MOSFET. RU30230R

 

RU30230R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RU30230R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 230 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 160 ns
   Cossⓘ - Выходная емкость: 1170 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для RU30230R

 

 

RU30230R Datasheet (PDF)

 ..1. Size:301K  ruichips
 ru30230r.pdf

RU30230R RU30230R

RU30230RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/230A,RDS (ON) =2m (Typ.) @ VGS=10V,IDS=75ARDS (ON) =2.5m (Typ.) @ VGS=4.5V,IDS=60A Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-220 175C Operating Temperature Lead Free and Green AvailableApplications DC/DC Converters

 8.1. Size:304K  ruichips
 ru30231r.pdf

RU30230R RU30230R

RU30231RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/230A,RDS (ON) =2.3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 9.1. Size:306K  ruichips
 ru30291r.pdf

RU30230R RU30230R

RU30291RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/290A,RDS (ON) =1.8m(Typ.)@VGS=10VRDS (ON) =2.6m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching Applications

 9.2. Size:291K  ruichips
 ru3020l.pdf

RU30230R RU30230R

RU3020LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/20A,RDS (ON) =15 m(Typ.)@VGS=10VRDS (ON) =25 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSym

 9.3. Size:303K  ruichips
 ru30290r.pdf

RU30230R RU30230R

RU30290RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/290A,RDS (ON) =1.8m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 9.4. Size:281K  ruichips
 ru3020h.pdf

RU30230R RU30230R

RU3020HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/12A,RDS (ON) =9.5m (Typ.) @ VGS=10VRDS (ON) =15m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche testedSOP-8 Lead Free and Green AvailableApplications Power Management in NotebookComputer, and DC-DC Converters inNetworking Systems.N-C

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