RU30E4B - параметры транзистора MOSFET, его аналоги, datasheet

RU30E4B Datasheet (PDF)

..1. Size:323K ruichips
ru30e4b.pdf pdf_icon

RU30E4BN-Channel Advanced Power MOSFETFeatures Pin Description 30V/4A, RDS (ON) =30m(Typ.)@VGS=10VD RDS (ON) =55m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected(Rating 2KV HBM) Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSN-Channel MOSFETAbsolute Maximum Rating

8.1. Size:293K ruichips
ru30e40l.pdf pdf_icon

RU30E40LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/60A,RDS (ON) =5m(Typ.)@VGS=10VRDS (ON) =10m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum

9.1. Size:277K ruichips
ru30e7h.pdf pdf_icon

RU30E7HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/7.8A,RDS (ON) =16m (Typ.) @ VGS=10VRDS (ON) =25m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

9.2. Size:331K ruichips
ru30e60m2.pdf pdf_icon

RU30E60M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/60A, RDS (ON) =3m(Typ.)@VGS=10VDDD RDS (ON) =6m(Typ.)@VGS=4.5V D Super High Dense Cell Design Ulta Low On-Resistance ESD Protected(Rating 4KV HBM) Fast Switching Speed GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN33