Справочник MOSFET. RU6055L

 

RU6055L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RU6055L
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 97 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 60 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 45 nC
   Время нарастания (tr): 45 ns
   Выходная емкость (Cd): 300 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
   Тип корпуса: TO-252

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RU6055L Datasheet (PDF)

 ..1. Size:284K  ruichips
ru6055l.pdf

RU6055L
RU6055L

RU6055LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/60A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-252Applications DC-DC Converters and Off-line UPS High Speed Power Switching High Frequency CircuitsN-Channel MOSFETAbsolute Maxim

 8.1. Size:296K  ruichips
ru6055s.pdf

RU6055L
RU6055L

RU6055SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/60A,RDS (ON) =9m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating TemperatureTO-263 Lead Free,RoHS compliantApplications Switching Application SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitC

 8.2. Size:300K  ruichips
ru6055r.pdf

RU6055L
RU6055L

RU6055RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/60A,RDS (ON) =9m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitC

 9.1. Size:372K  ruichips
ru6051k.pdf

RU6055L
RU6055L

RU6051KN-Channel Advanced Power MOSFETFeatures Pin Description 60V/50A, RDS (ON) =10m(Typ.)@VGS=10V RDS (ON) =12m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO251DDDDDDDApplicationspp DC-DC Converters

 9.2. Size:293K  ruichips
ru6050s.pdf

RU6055L
RU6055L

RU6050SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/50A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Ra

 9.3. Size:302K  ruichips
ru6050r.pdf

RU6055L
RU6055L

RU6050RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/50A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Ra

 9.4. Size:290K  ruichips
ru6050l.pdf

RU6055L
RU6055L

RU6050LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/50A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

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