RU60E6D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RU60E6D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.7 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 16 nC
Время нарастания (tr): 18 ns
Выходная емкость (Cd): 44 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
Тип корпуса: SOT-223
RU60E6D Datasheet (PDF)
ru60e6d.pdf
RU60E6DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/6A,RDS (ON) =32m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance Lead Free and Green AvailableApplications Power Management DC-DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
ru60e6h.pdf
RU60E6HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/6A,RDS (ON) =31m (Type) @ VGS=10VRDS (ON) =37m (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management. Switch Applications.N-Channel MOSFETAbsolute Maximum RatingsSymbolPa
ru60e16l.pdf
RU60E16LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/16A,RDS (ON) =60m(Typ.)@VGS=10VRDS (ON) =75m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximum
ru60e16r.pdf
RU60E16RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/16A,RDS (ON) =60m(Typ.)@VGS=10VRDS (ON) =75m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolParame
ru60e5d.pdf
RU60E5D N-Channel Advanced Power MOSFET Features Pin Description 60V/5A, RDS (ON) =58m (Type) @ VGS=10V RDS (ON) =70m (Type) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Available Applications Power Management DC-DC Converter Motor Control N-Channel
ru60e25r.pdf
RU60E25RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/25A,RDS (ON) =35m(Typ.)@VGS=10V Super High Dense Cell Design ESD protected 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings
ru60e25l.pdf
RU60E25LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/25A,RDS (ON) =35m(Typ.)@VGS=10VRDS (ON) =42m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
ru60e5h.pdf
RU60E5HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/5A,RDS (ON) =60m (Typ.) @ VGS=10VRDS (ON) =70m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management Switch ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolPara
ru60e25l.pdf
RU60E25Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise note
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