RU6881R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RU6881R
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 120 W
Предельно допустимое напряжение сток-исток |Uds|: 68 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 86 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 58 nC
Время нарастания (tr): 16 ns
Выходная емкость (Cd): 340 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO-220
RU6881R Datasheet (PDF)
ru6881r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
RU6881RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/86A,RDS (ON) =6.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application Systems Inverter SystemsN-Channel MOSFETAbsolute Maximum RatingsS
ru6888m.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
RU6888M N-Channel Advanced Power MOSFET Features Pin Description 60V/62A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available PDFN5060 (RoHS Compliant) Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Uni
ru6888.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
RU6888N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6.0m (Type) @ VGS=10V Ultra Low On-ResistanceTO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-263 TO-247 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Applicat
ru6888r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
RU6888RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte
ru6888s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
RU6888SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte
ru6888r3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
RU6888R3N-Channel Advanced Power MOSFETFeatures Pin Description 68V/88A,Insulation Slug RDS (ON) =6m(Typ.)@VGS=10V Insulation Slug(VISO1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested 175C Operating TemperatureS Lead Free and Green
Другие MOSFET... RU60E6D , RU60E6H , RU60P60R , RU6199Q , RU6199R , RU65120R , RU6581L , RU6581R , IRFB4115 , RU6888M , RU6888S , RU6H1L , RU6H2K , RU6H2L , RU6H2R , RU6H4R , RU6H5L .