Справочник MOSFET. RU80N15R

 

RU80N15R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: RU80N15R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 176 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 550 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

RU80N15R Datasheet (PDF)

 ..1. Size:292K  ruichips
ru80n15r.pdfpdf_icon

RU80N15R

RU80N15RN-Channel Advanced Power MOSFETFeatures Pin Description 150V/80ARDS (ON)=31m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableTO-220ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingN-Channel MOSFETAbsolute Maximum R

 7.1. Size:318K  ruichips
ru80n15q.pdfpdf_icon

RU80N15R

RU80N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/80A RDS (ON)=31m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Abs

 7.2. Size:317K  ruichips
ru80n15s.pdfpdf_icon

RU80N15R

RU80N15SN-Channel Advanced Power MOSFETFeatures Pin Description 150V/80A, RDS (ON) =31m(Typ.)@VGS=10VD Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableGSTO263DApplications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPSG High Speed Power SwitchingSN-Channel

 9.1. Size:266K  semihow
hrd80n06k hru80n06k.pdfpdf_icon

RU80N15R

Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP6942GMT | CEU14G04 | 2SK610 | 2SK2525-01 | AP55T10GH-HF | MTB1D7N03ATH8 | NCEP045N10

 

 
Back to Top

 


 
.