PHB110NQ06LT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PHB110NQ06LT
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 15 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 123 ns
Выходная емкость (Cd): 520 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.007 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PHB110NQ06LT
PHB110NQ06LT Datasheet (PDF)
phb110nq06lt.pdf
PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features
php110nq06lt phb110nq06lt.pdf
PHP/PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 01 04 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-D
php110nq08t phb110nq08t.pdf
PHP/PHB110NQ08TN-channel TrenchMOS standard level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D
phb110nq08lt php110nq08lt.pdf
PHP/PHB110NQ08LTN-channel TrenchMOS logic level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies
phb110nq08t.pdf
PHB110NQ08TN-channel TrenchMOS standard level FETRev. 02 12 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: PHB112N06T
