PHP112N06T; PHB112N06TN-channel enhancement mode field-effect transistorRev. 01 07 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP112N06T in SOT78 (TO-220AB)PHB112N06T in SOT404 (D2-PAK).2. Features Fast switching Very low on-state resistan

PHP/PHB110NQ08TN-channel TrenchMOS standard level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D

PHP/PHB119NQ06TN-channel TrenchMOS standard level FETRev. 01 05 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

PHP/PHB119NQ06TN-channel TrenchMOS standard level FETRev. 01 05 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 Ag Low thermal resistanceRDS(ON) 0.6 sGENERAL DESCRIPTI

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPT

Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 Ag Low thermal resistanceRDS(ON) 0.55 sGENERAL DESCRIPTIONN-channel,

PHP/PHB110NQ08LTN-channel TrenchMOS logic level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies

PHP/PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 01 04 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-D

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB11N03LT, PHD11N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPTIONN-chann

PHB110NQ08TN-channel TrenchMOS standard level FETRev. 02 12 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F