PHB119NQ06T datasheet, подбор замены

 ..1. Size:92K  philips
 phb119nq06t php119nq06t.pdf 

PHP/PHB119NQ06T N-channel TrenchMOS standard level FET Rev. 01 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

 ..2. Size:94K  philips
 php119nq06t phb119nq06t.pdf 

PHP/PHB119NQ06T N-channel TrenchMOS standard level FET Rev. 01 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

 9.1. Size:89K  philips
 php110nq08t phb110nq08t.pdf 

PHP/PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D

 9.2. Size:209K  philips
 phb110nq06lt.pdf 

PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 02 4 March 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features

 9.3. Size:35K  philips
 php11n50e phb11n50e phw11n50e.pdf 

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 A g Low thermal resistance RDS(ON) 0.6 s GENERAL DESCRIPTI

 9.4. Size:113K  philips
 phb11n06lt.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) 150 m (VGS = 5 V) g RDS(ON) 130 m (VGS = 10 V) s GENERAL DESCRIPT

 9.5. Size:114K  philips
 phb11n06lt phd11n06lt php11n06lt 3.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) 150 m (VGS = 5 V) g RDS(ON) 130 m (VGS = 10 V) s GENERAL DESCRIPT

 9.6. Size:102K  philips
 phb11n50e phw11n50e 1.pdf 

Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 A g Low thermal resistance RDS(ON) 0.55 s GENERAL DESCRIPTION N-channel,

 9.7. Size:89K  philips
 phb110nq08lt php110nq08lt.pdf 

PHP/PHB110NQ08LT N-channel TrenchMOS logic level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies

 9.8. Size:94K  philips
 php110nq06lt phb110nq06lt.pdf 

PHP/PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 01 04 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-D

 9.9. Size:262K  philips
 phb112n06t php112n06t.pdf 

PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). 2. Features Fast switching Very low on-state resistan

 9.10. Size:107K  philips
 phb11n03lt phd11n03lt 1.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB11N03LT, PHD11N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) 150 m (VGS = 5 V) g RDS(ON) 130 m (VGS = 10 V) s GENERAL DESCRIPTION N-chann

 9.11. Size:674K  nxp
 phb110nq08t.pdf 

PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 02 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F