Справочник MOSFET. IRFS9633

 

IRFS9633 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFS9633
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFS9633

 

 

IRFS9633 Datasheet (PDF)

 8.1. Size:286K  1
 irfs9640 irfs9641.pdf

IRFS9633 IRFS9633

 9.1. Size:290K  1
 irfs9530 irfs9531.pdf

IRFS9633 IRFS9633

 9.2. Size:282K  1
 irfs9240 irfs9241.pdf

IRFS9633 IRFS9633

 9.3. Size:296K  1
 irfs9540 irfs9541.pdf

IRFS9633 IRFS9633

 9.4. Size:288K  1
 irfs9140 irfs9141.pdf

IRFS9633 IRFS9633

 9.5. Size:232K  international rectifier
 irfs9n60apbf.pdf

IRFS9633 IRFS9633

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 9.6. Size:270K  international rectifier
 irfs9n60a.pdf

IRFS9633 IRFS9633

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 9.7. Size:26K  samsung
 irfs8xx irfs9xxx sss4n60 sss6n60.pdf

IRFS9633

 9.8. Size:13K  samsung
 irfs91xx irfs92xx.pdf

IRFS9633

 9.9. Size:225K  vishay
 irfs9n60a sihfs9n60a.pdf

IRFS9633 IRFS9633

IRFS9N60A, SiHFS9N60Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600requirementRDS(on) ()VGS = 10 V 0.75Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13Available Fully characterized capacitance and avalanche Qgd (nC) 20voltage and curr

 9.10. Size:278K  inchange semiconductor
 irfs9n60a.pdf

IRFS9633 IRFS9633

iscN-Channel MOSFET Transistor IRFS9N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Другие MOSFET... IRFS9543 , IRFS9620 , IRFS9621 , IRFS9622 , IRFS9623 , IRFS9630 , IRFS9631 , IRFS9632 , IRF1407 , IRFS9640 , IRFS9641 , IRFS9642 , IRFS9643 , IRFS9N60A , IRFSL11N50A , IRFSL9N60A , IRFSZ14A .

 

 
Back to Top