SFF9140Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -13.2 A Improved Gate Charge 175oC Operating TemperatureTO-3PF Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.161 (Typ.)1231.Gate 2. Drain 3. Source

SFF9140J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -18 AMPS Designers Data Sheet -100 VOLTS 0.20 FEATURES: Rugged Construction with Poly Silicon Gate P-CHANNEL Low RDS(on) and High Transconductance POWER MOSFET Excellent High Temperature S

SENSITRON SHD226408 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 472, REV A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.8 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - Volts 20 ID - - 3.9 Amps CONTINUOUS DRAIN CURRENT @ TC