SFT1452 datasheet, подбор замены

 ..1. Size:980K  onsemi
 sft1452.pdf 

Ordering number EN9051B SFT1452 N-Channel Power MOSFET http //onsemi.com 250V, 3A, 2.4 , Single DPAK/IPAK Features ON-resistance RDS(on)=1.8 (typ.) Input Capacitance Ciss=210pF(typ.) 10V drive Halogen free compliance ESD Diode-Protected Gate Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Sou

 8.1. Size:341K  sanyo
 sft1450.pdf 

SFT1450 Ordering number ENA1743 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1450 Applications Features ON-resistance RDS(on)1=21m (typ) Input Capacitance Ciss=715pF(typ) 4.5V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-t

 9.1. Size:491K  sanyo
 sft1423.pdf 

SFT1423 Ordering number ENA1509 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1423 Applications Features Low ON-resistance. 4V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A

 9.2. Size:351K  sanyo
 sft1440.pdf 

SFT1440 Ordering number ENA1816 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1440 Applications Features ON-resistance RDS(on)=6.2 (typ.) Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID

 9.3. Size:339K  sanyo
 sft1446.pdf 

SFT1446 Ordering number ENA1742 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1446 Applications Features ON-resistance RDS(on)1=39m (typ) Input Capacitance Ciss=750pF(typ) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-

 9.4. Size:363K  sanyo
 sft1445.pdf 

SFT1445 Ordering number ENA1897 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1445 Applications Features ON-resistance RDS(on)1=85m (typ.) Input Capacitance Ciss=1030pF(typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-

 9.5. Size:361K  sanyo
 sft1443.pdf 

SFT1443 Ordering number ENA1896 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1443 Applications Features ON-resistance RDS(on)1=180m (typ.) Input Capacitance Ciss=490pF(typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-

 9.6. Size:492K  sanyo
 sft1431.pdf 

SFT1431 Ordering number ENA1624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1431 Applications Features Motor drive application. Low ON-resistance. 4V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS 20

 9.7. Size:418K  onsemi
 sft1445.pdf 

Ordering number ENA1897A SFT1445 N-Channel Power MOSFET http //onsemi.com 100V, 17A, 111m , Single TP/TP-FA Features ON-resistance RDS(on)1=85m (typ.) Input Capacitance Ciss=1030pF(typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source

 9.8. Size:359K  onsemi
 sft1443.pdf 

Ordering number ENA1896B SFT1443 Power MOSFET http //onsemi.com 100V, 225m , 9A, Single N-Channel Features Electrical Connection N-Channel High Speed Switching ESD Diode-Protected Gate 2,4 Low Gate Charge Pb-free, Halogen-free and RoHS Compliance 1 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Value Unit 3 V Drain to Sou

 9.9. Size:920K  cn vbsemi
 sft1443.pdf 

SFT1443 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (