SQM110P06-8M9L
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SQM110P06-8M9L
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 230
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 110
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 130
nC
trⓘ -
Время нарастания: 15
ns
Cossⓘ - Выходная емкость: 750
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0089
Ohm
Тип корпуса:
TO-263
Аналог (замена) для SQM110P06-8M9L
SQM110P06-8M9L
Datasheet (PDF)
..1. Size:167K vishay
sqm110p06-8m9l.pdf 
SQM110P06-8m9Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0089 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0132 AEC-Q101 QualifieddID (A) - 110 Material categorization:Configuratio
4.1. Size:168K vishay
sqm110p06-07l.pdf 
SQM110P06-07Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0067 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0088 AEC-Q101 QualifieddID (A) - 120 Material categorization:For definitio
6.1. Size:168K vishay
sqm110p04-04l.pdf 
SQM110P04-04Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0040 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0060 Package with Low Thermal ResistanceID (A) - 120 AEC-Q101 QualifieddConfiguration
8.1. Size:104K vishay
sqm110n06-04l.pdf 
SQM110N06-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0035 Package with Low Thermal ResistanceRDS(on) () at VGS = 4.5 V 0.0050 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS T
8.2. Size:168K vishay
sqm110n04-03.pdf 
SQM110N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0028 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 qualifieddConfiguration Single 100 % Rg and UIS Tested Compl
8.3. Size:169K vishay
sqm110n06-06.pdf 
SQM110N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.006 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddTO-263 D 100 % Rg and UIS Tested
8.4. Size:167K vishay
sqm110n08-05.pdf 
SQM110N08-05www.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 75 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0048 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedDTO-263
8.5. Size:168K vishay
sqm110n04-04.pdf 
SQM110N04-04www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0035 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD Co
8.6. Size:168K vishay
sqm110n04-03l.pdf 
SQM110N04-03Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0053 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single
8.7. Size:167K vishay
sqm110n10-09.pdf 
SQM110N10-09www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 100 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0095 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD
8.8. Size:168K vishay
sqm110n04-02l.pdf 
SQM110N04-02Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0023 Package with Low Thermal ResistanceRDS(on) () at VGS = 4.5 V 0.0041 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS T
8.9. Size:165K vishay
sqm110n04.pdf 
SQM110N04-04Vishay SiliconixAutomotiveN-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD Compliant to RoHS Directive 2002/95/ECTO-263
8.10. Size:710K vishay
sqm110n05-06l.pdf 
SQM110N05-06Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 55DefinitionRDS(on) () at VGS = 10 V 0.006 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.010 Package with Low Thermal ResistanceID (A) 110 AEC-Q101 QualifiedcConfiguration Single
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