IRFSZ44A - параметры транзистора MOSFET, его аналоги, datasheet

IRFSZ44A Datasheet (PDF)

..1. Size:1018K samsung
irfsz44a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input CapacitanceID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

7.1. Size:42K 1
irfsz20 irfsz24 irfsz30 irfsz34 irfsz40 irfsz44.pdf pdf_icon

9.1. Size:280K 1
irfsz14a.pdf pdf_icon

9.2. Size:1006K samsung
irfsz24a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch