SQM120P06-07L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SQM120P06-07L
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 375 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 180 nC
Время нарастания (tr): 23 ns
Выходная емкость (Cd): 1034 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0067 Ohm
Тип корпуса: TO-263
Аналог (замена) для SQM120P06-07L
SQM120P06-07L Datasheet (PDF)
sqm120p06-07l.pdf
SQM120P06-07Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0067 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0088 AEC-Q101 QualifieddID (A) - 120 Material categorization:Configurat
sqm120p04-04l.pdf
SQM120P04-04Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0040 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0060 Package with Low Thermal ResistanceID (A) - 120 AEC-Q101 QualifieddConfiguration
sqm120n04-04.pdf
SQM120N04-04www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Co
sqm120n02-1m3l.pdf
SQM120N02-1m3Lwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 10 V 0.0013 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0017 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Sin
sqm120n08-05.pdf
SQM120N08-05www.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 75DefinitionRDS(on) () at VGS = 10 V 0.0048 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS TestedTO-263
sqm120n06-3m5l.pdf
SQM120N06-3m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0039 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration Single
sqm120n03-1m5l.pdf
SQM120N03-1m5LVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.0015 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0020 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Single AEC-Q10
sqm120n04-02l.pdf
SQM120N04-02Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0023 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0041 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single
sqm120n04-1m9.pdf
SQM120N04-1m9www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0019 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please
sqm120n06-06.pdf
SQM120N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.006 AEC-Q101 qualified dID (A) 120 100 % Rg and UIS testedConfiguration SinglePackage TO-263 Material categorization: for definitions of co
sqm120n04-1m7l.pdf
SQM120N04-1m7Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0020 AEC-Q101 QualifieddID (A) 120 Material categorization:Configuration Sin
sqm120n04-2m1.pdf
SQM120N04-2m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0021 100 % Rg and UIS TestedID (A) 120 AEC-Q101 QualifieddConfiguration Single Material categorization:DFor definitions of compliance
sqm120n10-3m8.pdf
SQM120N10-3m8www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS TestedConfiguration Single Material categorization:DFor definitions of compliance p
sqm120n04-03l.pdf
SQM120N04-03Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0053 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single
sqm120n04-1m8.pdf
SQM120N04-1m8Vishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0018 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Compliant to RoHS
sqm120n10-09.pdf
SQM120N10-09www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) () at VGS = 10 V 0.0095 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested
sqm120n06-04l.pdf
SQM120N06-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0050 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single
sqm120n04-03.pdf
SQM120N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0028 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 qualifiedd 100 % Rg and UIS TestedD Co
sqm120n04-1m7.pdf
SQM120N04-1m7www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please
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