SQM50020EL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SQM50020EL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 375 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 128 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 5750 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.002 Ohm
Тип корпуса: TO-263
Аналог (замена) для SQM50020EL
SQM50020EL Datasheet (PDF)
sqm50020el.pdf
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SQM50020ELwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0020 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.0025 100 % Rg and UIS testedID (A) 120Configuration Single Material categorization:for d
sqm50028em.pdf
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SQM50028EMwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESTO-263 7-Lead TrenchFET power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:for definitions of compliance please seeSSDD www.vishay.com/doc?99912GGDTop ViewPRODUCT SUMMARYVDS (V) 6
sqm50p08-25l.pdf
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SQM50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration
sqm50p06-15l.pdf
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SQM50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.015 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.022 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration
sqm50p03-07.pdf
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SQM50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0070 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0110 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuration
sqm50n04-4m0l.pdf
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SQM50N04-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0040 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0055 AEC-Q101 QualifieddID (A) 50 Material categorization:Configuration Singl
sqm50n04-4m1.pdf
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SQM50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s
sqm50p04-09l.pdf
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SQM50P04-09Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 40 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0094 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0170 AEC-Q101 QualifieddID (A) - 50 Material categorization:Configuratio
sqm50n04-5m0.pdf
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SQM50N04-5m0www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.005 100 % Rg and UIS TestedID (A) 50 AEC-Q101 QualifieddConfiguration Single Material categorization: For definitions of TO-263 compliance p
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History: IRFS7730-7PPBF