SSF6010G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF6010G
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 91 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 64 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 49 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 218 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm
Тип корпуса: TO-251
SSF6010G Datasheet (PDF)
ssf6010g.pdf
SSF6010G 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS(on) 8.3m (typ.) ID 64A TO-251 Mark in g a nd P i n Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and
ssf6010.pdf
SSF6010 Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical
ssf6010a.pdf
SSF6010A Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electric
ssf6014j7.pdf
SSF6014J7Main Product Characteristics: VDSS 60V RDS(on) 11m (typ.) ID 40APQFN 5x6Pin AssignmentSchematic DiagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope
ssf6014d.pdf
SSF6014D Main Product Characteristics: VDSS 60V RDS(on) 12m(typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
ssf6014a.pdf
SSF6014A Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and ele
ssf6014j8.pdf
SSF6014J8Main Product Characteristics:V 60VDSSR (on) 16m (typ.)DSI 22ADPinAssignment Schematic diagramDFN3.3x3.3Bottom viewFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf6014.pdf
SSF6014 Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect
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