SSF6010G - Даташиты. Аналоги. Основные параметры

SSF6010G 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS(on) 8.3m (typ.) ID 64A TO-251 Mark in g a nd P i n Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and

SSF6010 Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

SSF6010A Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electric

SSF6014J7Main Product Characteristics: VDSS 60V RDS(on) 11m (typ.) ID 40APQFN 5x6Pin AssignmentSchematic DiagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope

SSF6014D Main Product Characteristics: VDSS 60V RDS(on) 12m(typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

SSF6014A Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and ele

SSF6014J8Main Product Characteristics:V 60VDSSR (on) 16m (typ.)DSI 22ADPinAssignment Schematic diagramDFN3.3x3.3Bottom viewFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF6014 Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect