TK100A08N1 datasheet, аналоги, основные параметры

Наименование производителя: TK100A08N1  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 26 ns

Cossⓘ - Выходная емкость: 2100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm

Тип корпуса: TO-220SIS

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Аналог (замена) для TK100A08N1

- подборⓘ MOSFET транзистора по параметрам

 

TK100A08N1 даташит

 ..1. Size:231K  toshiba
 tk100a08n1.pdf pdf_icon

TK100A08N1

TK100A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100A08N1 TK100A08N1 TK100A08N1 TK100A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3)

 7.1. Size:230K  toshiba
 tk100a06n1.pdf pdf_icon

TK100A08N1

TK100A06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100A06N1 TK100A06N1 TK100A06N1 TK100A06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.2 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3)

 7.2. Size:252K  inchange semiconductor
 tk100a06n1.pdf pdf_icon

TK100A08N1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100A06N1 ITK100A06N1 FEATURES Low drain-source on-resistance RDS(ON) = 2.7m (typ.) (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLU

 8.1. Size:234K  toshiba
 tk100a10n1.pdf pdf_icon

TK100A08N1

TK100A10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100A10N1 TK100A10N1 TK100A10N1 TK100A10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.1 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SSF7008, TJ100F04M3L, TJ100F06M3L, TJ150F04M3L, TJ15S10M3, TJ200F04M3L, TJ9A10M3, TK100A06N1, RU7088R, TK100A10N1, TK100E06N1, TK100E08N1, TK100E10N1, TK100L60W, TK100S04N1L, TK10A60W5, TK10A80E