TK100A08N1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK100A08N1
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 130 nC
trⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 2100 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
Тип корпуса: TO-220SIS
Аналог (замена) для TK100A08N1
TK100A08N1 Datasheet (PDF)
tk100a08n1.pdf
TK100A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A08N1TK100A08N1TK100A08N1TK100A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)
tk100a06n1.pdf
TK100A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A06N1TK100A06N1TK100A06N1TK100A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)
tk100a06n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100A06N1ITK100A06N1FEATURESLow drain-source on-resistance:RDS(ON) = 2.7m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLU
tk100a10n1.pdf
TK100A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A10N1TK100A10N1TK100A10N1TK100A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.1 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)
tk100a10n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK100A10N1ITK100A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 3.8m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F