Справочник MOSFET. TK11A65W

 

TK11A65W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK11A65W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 23 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.39 Ohm
   Тип корпуса: TO-220SIS

 Аналог (замена) для TK11A65W

 

 

TK11A65W Datasheet (PDF)

 ..1. Size:237K  toshiba
 tk11a65w.pdf

TK11A65W TK11A65W

TK11A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK11A65WTK11A65WTK11A65WTK11A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.33 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 ..2. Size:253K  inchange semiconductor
 tk11a65w.pdf

TK11A65W TK11A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A65WITK11A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.39Easy to control Gate switchingEnhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

 7.1. Size:328K  toshiba
 tk11a65d.pdf

TK11A65W TK11A65W

TK11A65DMOSFETs Silicon N-Channel MOS (-MOS)TK11A65DTK11A65DTK11A65DTK11A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: ID

 8.1. Size:195K  toshiba
 tk11a60d.pdf

TK11A65W TK11A65W

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK11A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.2. Size:253K  inchange semiconductor
 tk11a60d.pdf

TK11A65W TK11A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A60DITK11A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.54 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

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