TK40E06N1 - аналоги, параметры транзистора - Справочник транзисторов

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TK40E06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40E06N1 TK40E06N1 TK40E06N1 TK40E06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 8.4 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enhan

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TK40E10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40E10N1 TK40E10N1 TK40E10N1 TK40E10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK40E10N1 ITK40E10N1 FEATURES Low drain-source on-resistance RDS(on) 8.2m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIM

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