TK72E08N1 - аналоги, даташиты, параметры транзистора

TK72E08N1 Datasheet (PDF)

..1. Size:246K toshiba
tk72e08n1.pdf pdf_icon

TK72E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72E08N1TK72E08N1TK72E08N1TK72E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan

..2. Size:246K inchange semiconductor
tk72e08n1.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK72E08N1ITK72E08N1FEATURESLow drain-source on-resistance:RDS(on) 4.3m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIM

9.1. Size:246K toshiba
tk72e12n1.pdf pdf_icon

TK72E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK72E12N1TK72E12N1TK72E12N1TK72E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

9.2. Size:254K inchange semiconductor
itk72e12n1.pdf pdf_icon

isc N-Channel MOSFET Transistor ITK72E12N1FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a