TMPF16N60
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TMPF16N60
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 48
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 16
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 53
nC
trⓘ -
Время нарастания: 61
ns
Cossⓘ - Выходная емкость: 256
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.47
Ohm
Тип корпуса:
TO-220F
Аналог (замена) для TMPF16N60
TMPF16N60
Datasheet (PDF)
..1. Size:341K trinnotech
tmp16n60 tmpf16n60.pdf 
TMP16N60/TMPF16N60TMP16N60G/TMPF16N60GVDSS = 660 V @TjmaxFeaturesID = 16A Low gate chargeRDS(on) = 0.47 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP16N60 / TMPF16N60 TO-220 / TO-220F TMP16N60 / TMPF16N60 RoHSTMP16N60G / TMPF16N60G
0.1. Size:618K trinnotech
tmp16n60a tmpf16n60a.pdf 
TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A
7.1. Size:625K trinnotech
tmp16n25z tmpf16n25z.pdf 
TMP16N25Z(G)/TMPF16N25Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A
9.1. Size:609K trinnotech
tmp10n80 tmpf10n80.pdf 
TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N
9.2. Size:604K trinnotech
tmp12n60a tmpf12n60a.pdf 
TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A
9.3. Size:336K trinnotech
tmp13n50 tmpf13n50.pdf 
TMP13N50/TMPF13N50TMP13N50G/TMPF13N50GVDSS = 550 V @TjmaxFeaturesID = 13A Low gate chargeRDS(on) = 0.48 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP13N50 / TMPF13N50 TO-220 / TO-220F TMP13N50 / TMPF13N50 RoHSTMP13N50G / TMPF13N50G
9.4. Size:340K trinnotech
tmp11n50sg tmpf11n50sg.pdf 
TMP11N50SG/TMPF11N50SGVDSS = 550 V @TjmaxFeaturesID = 10A Low gate chargeRDS(ON) = 0.7 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP11N50SG / TMPF11N50SG TO-220 / TO-220F TMP11N50SG / TMPF11N50SG Halogen Fre
9.5. Size:591K trinnotech
tmp18n20z tmpf18n20z.pdf 
TMP18N20Z(G)/TMPF18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A
9.6. Size:609K trinnotech
tmp10n60a tmpf10n60a.pdf 
TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A
9.7. Size:335K trinnotech
tmp10n60 tmpf10n60.pdf 
TMP10N60/TMPF10N60TMP10N60G/TMPF10N60GVDSS = 660 V @TjmaxFeaturesID = 10A Low gate chargeRDS(on) = 0.75 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHSTMP10N60G / TMPF10N60G
9.8. Size:577K trinnotech
tmp10n65 tmpf10n65.pdf 
TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N
9.9. Size:332K trinnotech
tmp12n60 tmpf12n60.pdf 
TMP12N60/TMPF12N60TMP12N60G/TMPF12N60GVDSS = 660 V @TjmaxFeaturesID = 12A Low gate chargeRDS(on) = 0.65 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP12N60 / TMPF12N60 TO-220 / TO-220F TMP12N60 / TMPF12N60 RoHSTMP12N60G / TMPF12N60G
9.10. Size:353K trinnotech
tmp11n50 tmpf11n50.pdf 
TMP11N50/TMPF11N50TMP11N50G/TMPF11N50GVDSS = 550 V @TjmaxFeaturesID = 11A Low gate chargeRDS(ON) = 0.67 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP11N50 / TMPF11N50 TO-220 / TO-220F TMP11N50 / TMPF11N50
9.11. Size:343K trinnotech
tmp15n50 tmpf15n50.pdf 
TMP15N50/TMPF15N50TMP15N50G/TMPF15N50GVDSS = 550 V @TjmaxFeaturesID = 14A Low gate chargeRDS(on) = 0.44 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP15N50 / TMPF15N50 TO-220 / TO-220F TMP15N50 / TMPF15N50 RoHSTMP15N50G / TMPF15N50G
9.12. Size:607K trinnotech
tmp10n65a tmpf10n65a.pdf 
TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A
9.13. Size:429K trinnotech
tmpf13n50a.pdf 
TMPF13N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 13A
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