Справочник MOSFET. IRFU420A

 

IRFU420A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFU420A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17(max) nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 53 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO251

 Аналог (замена) для IRFU420A

 

 

IRFU420A Datasheet (PDF)

 ..1. Size:248K  international rectifier
irfr420apbf irfu420apbf.pdf

IRFU420A
IRFU420A

PD - 95075ASMPS MOSFETIRFR420APbFIRFU420APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) max IDl High speed power switching500V 3.0 3.3Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitanc

 ..2. Size:265K  vishay
irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf

IRFU420A
IRFU420A

IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac

 ..3. Size:241K  vishay
irfr420a irfu420a sihfr420a sihfu420a.pdf

IRFU420A
IRFU420A

IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac

 ..4. Size:251K  infineon
irfr420a irfu420a sihfr420a sihfu420a.pdf

IRFU420A
IRFU420A

IRFR420A, IRFU420A, SiHFR420A, SiHFU420Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and DynamicdV/dt RuggednessQg (Max.) (nC) 17 Fully Characterized Capacitance andQgs (nC) 4.3Avalanche Voltage and CurrentQgd (nC) 8.5

 7.1. Size:879K  international rectifier
irfr420 irfu420.pdf

IRFU420A
IRFU420A

PD - 95078AIRFR420PbFIRFU420PbF Lead-Free1/7/05Document Number: 91275 www.vishay.com1IRFR/U420PbFDocument Number: 91275 www.vishay.com2IRFR/U420PbFDocument Number: 91275 www.vishay.com3IRFR/U420PbFDocument Number: 91275 www.vishay.com4IRFR/U420PbFDocument Number: 91275 www.vishay.com5IRFR/U420PbFDocument Number: 91275 www.vishay.com6IRFR/U420

 7.2. Size:647K  fairchild semi
irfr420b irfu420b.pdf

IRFU420A
IRFU420A

November 2001IRFR420B / IRFU420B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 7.3. Size:1841K  vishay
irfr420 irfu420 sihfr420 sihfu420.pdf

IRFU420A
IRFU420A

IRFR420, IRFU420, SiHFR420, SiHFU420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche RatedQg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420)Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420)Qgd (nC) 13 Available in Tap

 7.4. Size:1086K  vishay
irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf

IRFU420A
IRFU420A

IRFR420, IRFU420, SiHFR420, SiHFU420www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420)Qg (Max.) (nC) 19 Available in Tape and ReelQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease

 7.5. Size:272K  inchange semiconductor
irfu420.pdf

IRFU420A
IRFU420A

isc N-Channel MOSFET Transistor IRFU420FEATURESDrain Current I = 2.4A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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