FMP16N50ES Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FMP16N50ES
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 225 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 210 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для FMP16N50ES
FMP16N50ES Datasheet (PDF)
fmp16n50es.pdf

FMP16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V
fmp16n50e.pdf

FMP16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
fmp16n60es.pdf

FMP16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V
fmp16n60e.pdf

FMP16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
Другие MOSFET... FMP10N60E , FMP11N60E , FMP12N50E , FMP12N50ES , FMP12N60ES , FMP13N60E , FMP13N60ES , FMP16N50E , IRFZ44N , FMP16N60E , FMP16N60ES , FMP20N50E , FMP20N50ES , FMP20N60S1 , FMP30N60S1 , FMP76-010T , FMR09N90E .
History: SDF10N60 | IXFH21N50F | 2SK2183
History: SDF10N60 | IXFH21N50F | 2SK2183



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